SAMSUNG 96gb (1x96gb) 6400mbps Pc5-51200 Ecc Registered Dual RankM321RYGA0PB2-CCP
SAMSUNG SAMSUNG 96gb (1x96gb) 6400mbps Pc5-51200 Ecc Registered Dual RankM321RYGA0PB2-CCP description
SAMSUNG M321RYGA0PB2-CCP 96gb (1x96gb) 6400mbps Pc5-51200 Ecc Registered Dual Rank
The Samsung 96GB DDR5 6400Mbps PC5-51200 ECC Registered Dual Rank Memory is a high-capacity enterprise memory module engineered for demanding server, data center, and cloud computing environments. Featuring a 96GB capacity and ultra-fast 6400Mbps DDR5 performance, this memory module delivers exceptional bandwidth, faster data access, and improved system responsiveness for mission-critical workloads.
Built with ECC (Error-Correcting Code) technology, the module helps detect and correct memory errors automatically, ensuring enhanced data integrity, system stability, and continuous operation. Its Registered DIMM (RDIMM) architecture and Dual Rank design improve signal integrity and memory efficiency, making it ideal for enterprise servers that require high-capacity and reliable memory configurations.
Leveraging advanced DDR5 technology, this Samsung memory module offers greater bandwidth, improved power efficiency, and higher overall performance compared to previous memory generations. It is optimized for virtualization, cloud infrastructure, artificial intelligence (AI), machine learning, database processing, and high-performance computing (HPC) applications.
- Brand :samsung
- Part Number :M321RYGA0PB2-CCP
- Product Name :96gb Ddr5 Sdram Memory Module
- Storage Capacity :96gb
- Bus Speed :6400mbps Ddr5-6400/pc5-51200
- Form Factor :288-pin Rdimm
- Dimensions :1.00 (height) X 6.75 (depth)
- Weight :0.20 Lb
- Model: M321RYGA0PB2-CCP
- 96GB (1x96GB) DDR5 ECC Registered Memory Module
- PC5-51200 memory specification
- Ultra-fast 6400Mbps data transfer speed
- Dual Rank memory architecture
- ECC (Error-Correcting Code) technology for enhanced reliability
- Registered DIMM (RDIMM) design for enterprise servers
- High-bandwidth DDR5 memory performance
- Improved power efficiency compared to previous DDR generations
- Enhanced data integrity and system stability
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